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    • 专利摘要:
    PURPOSE: Provided is an anti-reflection coating composition which is useful for minute processing in the lithography process employing various kinds of radiation, and especially for the production of integrated circuit chips. CONSTITUTION: The anti-reflection coating-forming composition comprises a polymer(A) having structural units represented by the following formula (1) (wherein R1 is a monovalent atom other than a hydrogen atom or a group, and n is an integer of 0-4, provided that if n is an integer of 2-4, a plural number of R1's can be either the same or different; R2 and R3 are independently a monovalent atom or group; and X is a bivalent group) and a solvent. The polymer (A) may be preferably a polymer having the structure represented by the following general formula (2) (wherein R1-R3 and n are as described above, and R4 indicates a hydrogen atom or a monovalent organic group).
    公开号:KR20020037442A
    申请号:KR1020010070362
    申请日:2001-11-13
    公开日:2002-05-21
    发明作者:가즈오 가와구찌；마사또 다나까；쯔또무 시모가와
    申请人:마쯔모또 에이찌；제이에스알 가부시끼가이샤；
    IPC主号:
    专利说明:

    Anti-Reflective Film Forming Composition
    [1] FIELD OF THE INVENTION The present invention relates to antireflective film forming compositions which are useful for micromachining in lithographic processes using various radiations and which are particularly desirable for integrated circuit device fabrication.
    [2] In the manufacturing method of the integrated circuit device, the process size in the lithography process is progressing in order to obtain higher integration degree. In this lithography process, a desired pattern is obtained by applying a resist composition solution onto a substrate, transferring the mask pattern by a reduction projection exposure apparatus (stepper), and developing with a suitable developer. However, substrates such as highly reflective aluminum, aluminum-silicon alloys, aluminum-silicon-copper alloys, polysilicon and tungsten silicide used in this process reflect the irradiated radiation on the surface. Due to this effect, there was a problem in that a resist pattern was generated and a fine resist pattern could not be accurately reproduced.
    [3] In order to solve this problem, it has been proposed to provide an antireflection film having a property of absorbing radiation reflected from the substrate under a resist film to be formed on the substrate. As such an antireflection film, inorganic films such as a titanium film, a titanium dioxide film, a titanium nitride film, a chromium oxide film, a carbon film, and an α-silicon film formed by methods such as vacuum deposition, CVD and sputtering are known. Since silver has conductivity, it cannot be used in the manufacture of integrated circuits, or there are drawbacks such as requiring a special apparatus such as a vacuum deposition apparatus, a CVD apparatus, a sputtering apparatus, etc. to form an antireflection film. In order to solve the drawback of this inorganic anti-reflective film, the publication of Unexamined-Japanese-Patent No. 59-93448 proposes the organic anti-reflective film which consists of a polyamic acid (co) polymer or polysulfone (co) polymer and dye. Since the antireflection film is not conductive and the composition constituting the antireflection film is dissolved in a suitable solvent, no special device is required, and the antireflection film can be applied onto the substrate in the same solution state as the resist.
    [4] However, the antireflection film made of polyamic acid (co) polymer or polysulfone (co) polymer and dye cannot sufficiently prevent halation or standing waves because the amount of dye is restricted, and also mixes little with the resist ( This is a problem that results in deterioration of the resist pattern cross-sectional shape (pattern profile), such as missing defects and hamming.
    [5] Accordingly, an object of the present invention is to provide an antireflection film forming composition capable of forming a resist pattern having high anti-reflection effect, high inter-mixing, and excellent resolution and precision, without overcoming the aforementioned conventional problems.
    [6] MEANS TO SOLVE THE PROBLEM As a result of earnestly examining in order to achieve the said objective, it turned out that the polymer containing acenaphthylene as a monomer unit has a high absorbance with respect to an excimer laser beam, and has a high refractive index compared with the conventional underlayer antireflection film. Discovered and reached the present invention.
    [7] This invention provides the antireflection film formation composition characterized by containing the polymer and solvent which have a structural unit represented by following formula (1).
    [8] <Formula 1>
    [9]
    [10] Wherein R 1 is a monovalent atom or group other than a hydrogen atom, n is an integer of 0 to 4, provided that when n is 2 to 4, a plurality of R 1 may be the same or different, and R 2 and R 3 is independently a monovalent atom or group, and X is a divalent group.
    [11] EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.
    [12] In this specification, (meth) acrylic acid means acrylic acid and / or methacrylic acid. For example, the term (meth) acrylonitrile means acrylonitrile and / or methacrylonitrile. The same applies to (meth) acrylate, (meth) acrylamide and the like.
    [13] [Base polymer]
    [14] The polymer having a structural unit represented by the above formula (1) (hereinafter referred to as polymer (A)) is a basic component of the composition of the present invention.
    [15] In formula (1), R 1 is a monovalent atom (excluding hydrogen atoms) or a group, for example, a halogen atom, an alkyl group, an alkenyl group, a nitro group, an amino group, a hydroxyl group, a phenyl group, an acyl group, or a carboxyl group And sulfonic acid groups and mercapto groups. As said alkyl group, a C1-C6 linear or branched alkyl group is preferable, For example, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl etc. are mentioned. As an alkenyl group, a C2-C6 linear or branched alkenyl group is preferable, For example, vinyl, allyl, etc. are mentioned. Examples of the halogen atom include fluorine, chlorine and bromine. Moreover, as said acyl group, a C1-C6 aliphatic or aromatic acyl group is preferable, For example, an acetyl group etc. are mentioned. As said amino group, a primary amino group is preferable.
    [16] The said R <2> and R <3> is monovalent atom or group, As a monovalent atom and group, the same thing as what was illustrated about the hydrogen atom and said R <1> can be illustrated. Also, X is a divalent group, for example, -CO-, -NH-, -SO 2 - , -S-, -O-, -COO-, -CONH-, -O-CO-O-, -NH-CO-NH-, -Si (R) 2- (where R is a straight or branched chain alkyl group having 1 to 6 carbon atoms, a straight or branched chain alkenyl group having 2 to 6 carbon atoms, carbon Alicyclic groups having 4 to 10 atoms, aromatic hydrocarbons having 6 to 12 carbon atoms, 4 to 10 membered rings, and the like, -Si (R) 2 -O- (where R is as described above), and the like. Among these, Preferably -CO-, -COO-, -CONH- etc. are mentioned.
    [17] As a specific example of a polymer (A), the polymer which has a structure represented by following General formula (2) is mentioned, for example.
    [18]
    [19] In the formula, R 1 to R 3 and n are as described above, and R 4 represents a hydrogen atom or a monovalent organic group.
    [20] Here, as the monovalent organic group represented by R 4 , for example, a linear or branched alkyl group having 1 to 6 carbon atoms, a linear or branched alkenyl group having 2 to 6 carbon atoms, or carbon atoms A 4-10 alicyclic group, a C6-C12 aromatic hydrocarbon group, a 4-10 membered heterocyclic group, etc. are mentioned.
    [21] Examples of the alkyl group represented by R 4 include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl and the like. As said alkenyl group, a vinyl group, a propenyl group, a 1-phthalenyl group, 2-phthalenyl group, etc. are mentioned, for example. As said alicyclic group, a cyclohexyl group etc. are mentioned, for example. As said aromatic hydrocarbon group, a phenyl group, a naphthyl group, an anthyl group, etc. are mentioned, for example. As said heterocyclic group, a furfuryl group is mentioned, for example. In addition, the structural unit represented by the formula (2) in the polymer (A) is preferably 50 mol% or more, more preferably 60 mol% or more, further preferably 70 mol to the entire structural unit represented by the formula (1). It is% or more.
    [22] [Synthesis method]
    [23] In the present invention, the polymer (A) can be obtained, for example, by the method described below. Although two synthetic methods are mentioned here, it is not limited to these methods.
    [24] Synthesis Method 1
    [25] (a) step: homopolymerizing acenaphthylene or copolymerizing with another copolymerizable monomer to obtain a precursor polymer having a structural unit represented by the above formula (3),
    [26] (b) Process: Furthermore, it is a method of co-condensing this precursor polymer and aldehydes in presence of an acidic catalyst, or another co-condensable component, and obtaining a polymer (A).
    [27]
    [28] In formula, R <1> -R <3> and n are as above.
    [29] (a) Process: First, the precursor polymer which has a structural unit represented by the said General formula (3) is obtained by homopolymerizing acenaphthylene or copolymerizing with another copolymerizable monomer.
    [30] As acenaphthylene used for the said precursor polymer synthesis, For example, acenaphthylene;
    [31] 1-methylacenaphthylene, 3-methylacenaphthylene, 4-methylacenaphthylene, 5-methylacenaphthylene, 1-ethylacenaphthylene, 3-ethylacenaphthylene, 4-ethylacenaphthylene, 5 Alkylacenaphthylenes such as ethylacenaphthylene;
    [32] 1-chloroacenaphthylene, 3-chloroacenaphthylene, 4-chloroacenaphthylene, 5-chloroacenaphthylene, 1-bromoacenaphthylene, 3-bromoacenaphthylene, 4-bromoacenaph Halogenated acenaphthylenes such as methylene and 5-bromoacenaphthylene;
    [33] Nitroacenaphthylenes such as 1-nitroacenaphthylene, 3-nitroacenaphthylene, 4-nitroacenaphthylene, and 5-nitroacenaphthylene;
    [34] Aminoacenaphthylenes such as 1-aminoacenaphthylene, 3-aminoacenaphthylene, 4-aminoacenaphthylene and 5-aminoacenaphthylene;
    [35] Phenylacenaphthylenes such as 1-phenylacenaphthylene, 3-phenylacenaphthylene, 4-phenylacenaphthylene and 5-phenylacenaphthylene;
    [36] Mercaptoacenaphthylenes such as 1-mercaptoacenaphthylene, 3-mercaptoacenaphthylene, 4-mercaptoacenaphthylene, and 5-mercaptoacenaphthylene;
    [37] Hydroxyacenaphthylenes such as 1-hydroxyacenaphthylene, 3-hydroxyacenaphthylene, 4-hydroxyacenaphthylene, and 5-hydroxyacenaphthylene;
    [38] Acenaphthylene carboxylic acids, such as acenaphthylene-1-carboxylic acid, acenaphthylene-3-carboxylic acid, acenaphthylene-4-carboxylic acid, and acenaphthylene-5-carboxylic acid, etc. are mentioned. These can be used individually by 1 type or in mixture of 2 or more types.
    [39] As a monomer copolymerizable with the acenaphthylene which comprises the said precursor polymer, For example, Styrene;
    [40] α-methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, o-acetoxystyrene, m-acetoxystyrene, Substituted styrene compounds, such as p-acetoxy styrene and pt-butoxy styrene;
    [41] Carboxylic acid vinyl ester compounds such as vinyl acetate, vinyl propionate and vinyl capurate;
    [42] Vinyl cyanide compounds such as (meth) acrylonitrile and α-chloroacrylonitrile;
    [43] Methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, n-hexyl (meth) acrylate, glycidyl (meth) acrylate, and the like Unsaturated carboxylic acid ester compounds;
    [44] Unsaturated group-containing unsaturated carboxylic acid esters such as ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, vinyl (meth) acrylate, and dimethylvinylmethacryloyloxymethylsilane;
    [45] Halogen-containing vinyl compounds such as 2-chloroethyl vinyl ether, vinyl chloroacetate and allyl chloroacetate;
    [46] Hydroxyl group-containing vinyl compounds such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, and (meth) allyl alcohol;
    [47] Amide group-containing vinyl compounds such as (meth) acrylamide and crotonic acid amide;
    [48] Carboxyl group-containing vinyl compounds such as 2-methacryloyloxyethyl succinic acid and 2-methacryloyloxyethyl maleic acid;
    [49] And vinyl aryl compounds such as 1-vinyl naphthalene, 2-vinyl naphthalene, 9-vinyl anthracene and 9-vinylcarbazole. These monomers can be used individually by 1 type or in mixture of 2 or more types.
    [50] As for the composition ratio of the acenaphthylenes and the copolymerizable monomer which comprise the said precursor polymer, it is preferable that acenaphthylenes contain 5-100 mol% with respect to both total molar amounts, More preferably, it is 10-100 mol %, More preferably, it contains 20-100 mol%.
    [51] The molecular weight of the precursor polymer is appropriately selected depending on the desired properties of the antireflective film, but is usually 500 to 10,000, preferably 1,000 to 5,000, in terms of the weight average molecular weight (hereinafter referred to as "Mw") in terms of polystyrene.
    [52] The precursor polymer can be produced in a polymerization form such as solution polymerization by, for example, a suitable method such as radical polymerization, anionic polymerization or cationic polymerization.
    [53] (b) Process: Subsequently, condensation reaction of a precursor polymer and aldehydes is carried out to obtain a polymer (A) having a structural unit represented by the formula (1).
    [54] As aldehydes used for a condensation reaction, For example, saturated aliphatic aldehydes, such as formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde; Unsaturated aliphatic aldehydes such as acrolein and methacrolein; Heterocyclic aldehydes such as furfural; Aromatic aldehydes, such as benzaldehyde, naphthyl aldehyde, anthraaldehyde, etc. are mentioned, Especially preferably, they are formaldehyde and paraformaldehyde. These can be used individually by 1 type or in mixture of 2 or more types.
    [55] In the condensation reaction, the amount of aldehydes is 1 to 10,000 parts by weight based on 100 parts by weight of the precursor polymer.
    [56] Moreover, in this condensation reaction, aromatic hydrocarbons can also be added as another cocondensation component. In this case, the aromatics are used as reaction components simultaneously with the precursor polymer. In this case, the condensation reaction is carried out by mixing the precursor polymers, aromatics and aldehydes and heating them in a solvent-free or solvent in the presence of an acid catalyst.
    [57] As aromatics, any can be used as long as it is aromatics which can be co-condensed-polymerized with acenaphthylene. For example, Unsubstituted aromatic hydrocarbons, such as benzene, naphthalene, anthracene, phenanthrene, acenaphthene; Alkyl substituted aromatic hydrocarbons such as toluene, m-xylene, p-xylene and 1-methylnaphthalene; Hydroxy substituted aromatic hydrocarbons such as phenol, cresol, 1-naphthol, bisphenols, and polyhydric phenols; Carboxyl substituted aromatic hydrocarbons such as benzoate, 1-naphthalenecarboxylic acid and 9-anthracene carboxylic acid; Amino substituted aromatic hydrocarbons such as aniline; Halogenated aromatic hydrocarbons, such as chlorobenzene and bromobenzene, etc. are mentioned. These can be used individually by 1 type or in mixture of 2 or more types.
    [58] The amount of aromatics and aldehydes used in the condensation reaction is 10,000 parts by weight or less and 1 to 1,000 parts by weight of aldehydes based on 100 parts by weight of the propolymers.
    [59] As an acid catalyst which can be used in the said condensation reaction, For example, Photoacids, such as a sulfuric acid, phosphoric acid, a perchloric acid; Eutechonic acids, such as p-toluenesulfonic acid; Carbonic acids, such as formic acid and oxalic acid, are used. The amount of acid catalyst used depends on the type of acid used. Usually, the amount is 0.001 to 10,000 parts by weight, preferably 0.01 to 1,000 parts by weight based on 100 parts by weight of acenaphthylenes.
    [60] Although the above condensation reaction is performed also without a solvent, it is usually performed using a solvent. As a solvent, all can be used as long as it does not inhibit reaction. For example, the solvent used for resin which uses aldehydes, such as a phenol resin, a melanin resin, and an amino resin, as a raw material can be used. Specifically, in addition to the solvent used for the composition of this invention mentioned later, cyclic ethers, such as tetrahydrofuran and a dioxane, are mentioned. Moreover, if the acid catalyst to be used is a liquid such as formic acid, for example, it can also serve as a solvent.
    [61] The reaction temperature at the time of condensation is 40 to 200 degreeC. The reaction time is selected depending on the reaction temperature, but is usually 30 minutes to 72 hours.
    [62] Mw of the polymer (A) obtained as mentioned above is 1,000 to 100,000 normally, Preferably it is 5,000 to 50,000.
    [63] Synthesis Method 2
    [64] (a) step: co-condensing acenaphthylenes and aldehydes in the presence of an acid catalyst or other co-condensable components to obtain a precursor condensate having a structural unit represented by the following formula (4),
    [65] (b) Process: It is a method obtained by copolymerizing this precursor condensate independently or with another copolymerizable monomer.
    [66]
    [67] In formula, R <1> -R <3> , n and X are as above.
    [68] (a) step: First, acenaphthylenes and aldehydes are condensed alone or co-condensed by addition of other cocondensable aromatics to obtain a precursor condensate having the structural unit represented by the above formula (4). Acenaphthylenes, aldehydes, and aromatics that can be used in the synthesis of the precursor condensate include the same ones as those mentioned in Synthesis Method 1 above. Condensation conditions of the precursor condensate are the same as those for condensation of the aforementioned precursor polymer.
    [69] The Mw of the precursor condensate is appropriately selected depending on the desired properties of the antireflection film, but is usually 100 to 10,000, preferably 2,000 to 5,000.
    [70] (b) step: Subsequently, the precursor condensate is polymerized alone or copolymerized with another copolymerizable monomer to obtain polymer (A). The monomers used for a polymerization reaction can mention the same thing as what was mentioned by the said synthesis method 1, and the like. The polymerization conditions of the precursor condensate are the same as those for the polymerization of the above-mentioned acenaphthylenes.
    [71] [solvent]
    [72] The composition of this invention contains a solvent other than a polymer (A). As this solvent, the solvent which can melt | dissolve the component of the composition mentioned above and later, for example, ethylene glycol monoalkyl, such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, etc. Ethers;
    [73] Ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, and ethylene glycol monobutyl ether acetate;
    [74] Diethylene glycol dialkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether and diethylene glycol dibutyl ether;
    [75] Triethylene glycol dialkyl ethers such as triethylene glycol dimethyl ether and triethylene glycol diethyl ether;
    [76] Propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monobutyl ether;
    [77] Propylene glycol dialkyl ethers such as propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, and propylene glycol dibutyl ether;
    [78] Propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate and propylene glycol monobutyl ether acetate;
    [79] Lactic acid esters such as methyl lactate, ethyl lactate, lactic acid-n-propyl, isopropyl lactate, lactic acid-n-butyl, and lactic acid-n-isobutyl;
    [80] Methyl formate, ethyl formate, formic acid-n-propyl, isopropyl formate, formic acid-n-butyl, isobutyl formate, formic acid-n-amyl, isoamyl formate, methyl acetate, ethyl acetate, butyl acetate, acetic acid-n- Amyl, isoamyl acetate, acetic acid-n-hexyl, methyl propionate, ethyl propionate, propionic acid-n-propyl, isopropyl propionate, n-butyl propionate, isobutyl propionate, methyl butyrate, ethyl butyrate, butyric acid-n-propyl Aliphatic carboxylic acid esters such as isopropyl butyrate, butyrate-n-butyl and isobutyl butyrate;
    [81] Ethyl hydroxyacetate, 2-hydroxy-2-methylpropionate, methyl 3-methoxy-2-methylpropionate, methyl 2-hydroxy-3-methylbutyrate, ethyl methoxyacetate, ethyl ethoxyacetate, 3- Methyl methoxypropionate, ethyl 3-ethoxypropionate, ethyl 3-methoxypropionate, 3-methoxypropyl acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-methyl-3- Other esters such as methoxybutyl propionate, 3-methyl-3-methoxybutylbutyrate, methyl acetic acid acetate, methyl pyruvate and ethyl pyruvate;
    [82] Aromatic hydrocarbons such as toluene and xylene;
    [83] Ketones such as methyl ethylene ketone, methyl-n-amyl ketone, methyl propyl ketone, methyl butyl ketone, 2-heptanone, 3-heptanone, 4-heptanone, and cyclohexanone;
    [84] Amides such as N-methylformamide, N, N-dimethylformamide, N-methylacetamide, N, N-dimethylacetamide, and N-methylpyrrolidone;
    [85] Lactones, such as (gamma)-butyrolactone, are selected suitably and used. Preferred solvents among them include ethylene glycol monoethyl ether acetate, ethyl lactate, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl-n-amyl ketone, cyclohexanone, 2-heptanone, and the like. . These solvents are used individually by 1 type or in mixture of 2 or more types.
    [86] The blending amount of the solvent is an amount such that the solid content concentration of the composition to be obtained is usually about 0.01 to 70% by weight, preferably 0.05 to 60% by weight, more preferably 0.1 to 50% by weight.
    [87] [Other Ingredients]
    [88] The crosslinking agent, binder resin, and various additives can be mix | blended with the composition of this invention as needed in the range which does not impair the desired effect of this invention.
    [89] (Bridge)
    [90] The crosslinking agent also serves to prevent intermixing between the antireflection film obtained by applying the composition of the present invention to a semiconductor substrate and a resist film applied and formed thereon, and to prevent cracking after application. do.
    [91] As the crosslinking agent, polynuclear phenols and various commercially available curing agents can be used. As polynuclear phenols, For example, binuclear phenols, such as (1,1'-biphenyl) -4,4'- diol, methylene bisphenol, and 4,4'- ethylidene bisphenol; 3, such as 4,4 ', 4 "-methylidene trisphenol and 4,4'-[1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol Polyphenols, such as nucleus phenol and novolak, etc. are mentioned, Among these polynuclear phenols, 4,4 '-[1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] Ethylidene] bisphenol and novolac are preferably used.
    [92] As a hardening | curing agent, For example, diisocyanates, such as tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, and cyclohexane diisocyanate;
    [93] Epicoat 812, East 815, East 826, East 828, East 834, East 836, East 871, East 1001, East 1004, East 1007, East 1009, East 1031 (trade name, Eucashell Epoxy), Araldite 6600, East 6700, East 6800, East 502, East 6071, East 6084, East 6097, East 6099 (Product Name, Shiva Gaigi), DER 331, East 332, East 333, East 661, East 644, East 667 (Product Name, Dow Epoxy compounds);
    [94] Cymel 300, East 301, East 303, East 350, East 370, East 771, East 325, East 327, East 703, East 712, East 701, East 272, East 202, My Court 506, East 508 (brand name, Mitsui Benzoguanamine series, such as melamine-type hardening | curing agents, such as a cyanamide product, Cymel 1123, copper 1123-10, copper 1128, my coat 102, copper 105, copper 106, copper 130 (brand name, Mitsui cyanamid products) Curing agent;
    [95] Glycoluril-type hardening | curing agents, such as Cymel 1170, 1172 (brand name, Mitsui cyanamid product), and nikalac N-2702 (brand name, product from Sanwa Chemical Co., Ltd.), etc. are mentioned.
    [96] The blending amount of the crosslinking agent is usually 5,000 parts by weight or less, preferably 1,000 parts by weight or less per 100 parts by weight of the solid content of the antireflection film composition.
    [97] (Binder resin)
    [98] As the binder resin, various thermoplastic and thermosetting synthetic resins can be used. Examples of the thermoplastic resin include polyethylene, polypropylene, poly-1-butene, poly-1-pentene, poly-1-hexene, poly-1-heptene, poly-1-octene, poly-1-decene, poly-1- Α-olefin polymers such as dodecene, poly-1-tetradecene, poly-1-hexadecene, poly-1-octadecene and polyvinylcycloalkane;
    [99] Α, β-unsaturated aldehyde polymers such as poly-1,4-pentadiene, poly-1,4-hexadiene, poly-1.5-hexadiene, poly-1,7-o-crocrolein, etc .;
    [100] Α, β-unsaturated ketone polymers such as polymethyl vinyl ketone, polyaromatic vinyl ketone, and polycyclic vinyl ketone;
    [101] Α, β-unsaturated acid derivative polymers such as poly (meth) acrylic acid, salts of poly (meth) acrylic acid, esters of poly (meth) acrylic acid, halides of poly (meth) acrylic acid;
    [102] Polymers of α, β-unsaturated acid anhydrides such as poly (meth) acrylic anhydride and polymaleic anhydride;
    [103] Unsaturated polybasic acid ester polymers such as polymethylene malonic acid diester and polyitaconic acid diester;
    [104] Diolefinic acid ester polymers such as polysorbic acid ester and muconic acid ester;
    [105] Α, β-unsaturated thioester polymers such as polyacrylic acid thioester, methacrylic acid thioester, and α-croacrylic acid thioester;
    [106] Polymers of acrylonitrile derivatives such as polyacrylonitrile and polymethacrylonitrile;
    [107] Polymers of acrylamide derivatives such as polyacrylamide and polymethacrylamide;
    [108] Styryl metal compound polymers;
    [109] Polyvinyloxy metal compounds;
    [110] Polyimines;
    [111] Polyethers such as polyphenylene oxide, poly-1,3-dioxolane, polyoxirane, polytetrahydrofuran and polytetrahydropyran;
    [112] Polysulfides;
    [113] Polysulfonamides;
    [114] Polypeptides;
    [115] Polyamides such as nylon 66 and nylon 1 to nylon 12;
    [116] Polyesters such as aliphatic polyesters, aromatic polyesters, alicyclic polyesters, polycarbonate esters, and alkyd resins;
    [117] Polyurea;
    [118] Polysulfones;
    [119] Polyazines;
    [120] Polyamines;
    [121] Polyaromatic ketones;
    [122] Polyimides;
    [123] Polybenzoimidazoles;
    [124] Polybenzoxazoles;
    [125] Polybenzothiazoles;
    [126] Polyaminotriazoles;
    [127] Polyoxadiazoles;
    [128] Polypyrazoles;
    [129] Polytetrazols;
    [130] Polyquinoxaline;
    [131] Polytriazines;
    [132] Polybenzooxadiones;
    [133] Polyquinolines:
    [134] Polyanthrazolines etc. are mentioned. These can be used individually by 1 type or in mixture of 2 or more types. The compounding quantity of these binder resins is 20 weight part or less normally per 100 weight part of polymers (A), Preferably it is 10 weight part or less.
    [135] In addition to the binder resin, in order to prevent intermixing with the resist, a thermosetting resin which is cured by heating after application to a substrate and is insoluble in a solvent is also preferably used.
    [136] Examples of such thermosetting resins include thermosetting acrylic resins, phenol resins, urea resins, melanin resins, amino resins, aromatic hydrocarbon resins, epoxy resins, alkyd resins, and the like. These can be used individually by 1 type or in mixture of 2 or more types.
    [137] (Other additives)
    [138] As another additive, a radiation absorber, surfactant, an acid generator, etc. are mentioned, for example.
    [139] As the radiation absorbing agent, compounds having various radiation absorbing properties can be used, and examples thereof include oil-soluble dyes, disperse dyes, basic dyes, methine dyes, pyrazole dyes, imidazole dyes, and hydroxyazo dyes. dyes; Fluorescent brighteners such as bixin derivatives, norbiccin, stilbenes, 4,4'-diaminostilbene derivatives, coumarin derivatives and pyrazoline derivatives; Ultraviolet absorbers such as hydroxyazo dyes, tinuvin 234 (trade name, Shiva-Geigi), and tinuvin 1130 (trade name, Shiva-Geigi); Aromatic compounds, such as an anthracene derivative and an anthraquinone derivative, etc. are mentioned. These radiation absorbers can be used individually by 1 type or in combination of 2 or more types. The compounding quantity of a radiation absorber is 100 weight part or less normally, Preferably it is 50 weight part or less per 100 weight part of solid content of an antireflection film forming composition.
    [140] Surfactant has the effect | action which improves coatability, striation, wettability, developability, etc. As such surfactant, for example, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol In addition to nonionic surfactants such as distearate, commercially available products include, for example, KP341 (trade name, Shin-Etsu Chemical Co., Ltd.), an organosiloxane polymer, and polyflow No. 75, which is a (meth) acrylic acid-based (co) polymer. . 95 (brand name, Kyoesha oil and fat chemical industry product), F-top EF 101, copper EF204, copper EF303, copper EF352 (brand name, Tochem Products), Megapack F171, copper F172, copper F173 (trade name, Dainippon Ink, Inc. High School Products), Florid FC430, East FC431, East FC135, East FC93 (trade name, Sumitomo 3M), Asahi Guard AG710, Surflon S382, East SC101, East SC102, East SC103, East SC104, East SC105, East SC106 (Brand name, Asahi glass product) etc. are mentioned. These can be used individually by 1 type or in combination of 2 or more types. The compounding quantity of surfactant is 15 weight part or less normally, Preferably it is 10 weight part or less per 100 weight part of solid content of an antireflection film composition.
    [141] As an acid generator, a photo acid generator and a thermal acid generator can be used, and these can be used together.
    [142] As said photo acid generator, diphenyl iodonium trifluoromethane sulfonate, diphenyl iodonium pyrene sulfonate, diphenyl iodonium dodecylbenzene sulfonate, diphenyl iodonium nonafluoro-n-butane sulfo, for example. Nate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium dodecylbenzenesulfonate, bis (4-t-butylphenyl) iodonium camphor sulfo Nate, bis (4-t-butylphenyl) iodonium naphthalenesulfonate, bis (4-t-butylphenyl) iodonium hexafluoro antimonate, bis (4-t-butylphenyl) iodonium nonafluoro- n-butanesulfonate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium naphthalenesulfonate, triphenylsulfonium nonafluoro-n-butanesulfonate, (Hydroxyphenyl) benzenemethylsulfoniumtoluenesulfonate, c Clohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, dicyclohexyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate,
    [143] Dimethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, diphenyliodnium hexafluoroantimonate, triphenylsulfonium camphasulfonate, (4-hydroxyphenyl) benzylmethylsulfonium toluenesulfonate , 1-naphthyldimethylsulfonium trifluoromethanesulfonate, 1-naphthyldiethylsulfonium trifluoromethanesulfonate, 4-cyano-1-naphthyldimethylsulfonium trifluoromethanesulfonate, 4- Nitro-1-naphthyldimethylsulfoniumtrifluoromethanesulfonate, 4-methyl-1-naphthyldimethylsulfonium trifluoromethanesulfonate, 4-cyano-1-naphthyl-diethylsulfoniumtrifluor Romethanesulfonate, 4-nitro-1-naphthyldiethylsulfoniumtrifluoromethanesulfonate, 4-methyl-1-naphthyldiethylsulfoniumtrifluoromethanesulfonate, 4-hydroxy-1-naphthyl Dimethylsulfonium trifluoromethanesulfonate, 4-hydroxy-1-naphthyltet Lahydrothiopheniumtrifluoromethanesulfonate, 4-methoxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4-ethoxy-1-naphthyltetrahydrothiopheniumtrifluoro Methanesulfonate, 4-methoxymethoxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4-ethoxymethoxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4- (1-methoxyethoxy) -1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4- (2-methoxyethoxy) -1-naphthyltetrahydrothiopheniumtrifluoro Methanesulfonate, 4-methoxycarbonyloxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4-ethoxycarbonyloxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfo Nate, 4-n-propoxycarbonyloxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulphate Phonate,
    [144] 4-i-propoxycarbonyloxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4-n-butoxycarbonyloxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfo Nate, 4-t-butoxycarbonyloxy-1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4- (2-tetrahydrofuranyloxy) -1-naphthyltetrahydrothiopheniumtri Fluoromethanesulfonate, 4- (2-tetrahydropyranyloxy) -1-naphthyltetrahydrothiopheniumtrifluoromethanesulfonate, 4-benzyloxy-1-naphthyltetrahydrothiopheniumtrifluor Onium salt-based photoacid generators such as romethane sulfonate and 1- (naphthylacetmethyl) tetrahydrothiopheniumtrifluoromethanesulfonate;
    [145] Halogen-containing compounds such as phenyl-bis (trichloromethyl) -s-triazine, methoxyphenyl-bis (trichloromethyl) -s-triazine and naphthyl-bis (trichloromethyl) -s-triazine Acid generators;
    [146] 1,2-naphthoquinone diazide-4-sulfonyl chloride, 1,2-naphthoquinone diazide-5-sulfonyl chloride, 1,2 of 2,3,4,4'-tetrabenzophenone Diazoketone compound-based photoacid generators such as naphthoquinone diazide-4-sulfonic acid ester or 1,2-naphthoquinone diazide-5-sulfonic acid ester;
    [147] Sulfonic acid compound-based photoacid generators such as 4-trisfenacylsulfone, methylphenacylsulfone and bis (phenylsulfonyl) methane;
    [148] Benzointosylate, tristrifluoromethanesulfonate of pyrogallol, nitrobenzyl-9,10-diethoxyanthracene-2-sulfonate, trifluoro methanesulfonylbicyclo [2, 2,1] hept-5- Sulphonic acid compound type photoacid generators, such as ene-2,3-dicarboxydiimide, N-hydroxysuccinimide trifluoromethanesulfonate, and 1,8- naphthalenedicarboxylic acid imide trifluoromethanesulfonate Etc. can be mentioned. These can be used individually by 1 type or in combination of 2 or more types.
    [149] Examples of the thermal acid generator include 2,4,4,6-tetrabromocyclohexanedienone, benzointosylate, 2-nitrobenzyltosylate, alkylsulfonate, and the like. These can be used individually by 1 type or in combination of 2 or more types.
    [150] The compounding amount of these acid generators is usually 5000 parts by weight or less, preferably 0.1 parts by weight or more and 1000 parts by weight or less per 100 parts by weight of the solid content of the antireflection film composition.
    [151] As other additives, storage stabilizers, antifoaming agents, adhesion aids and the like can be given.
    [152] [How to use composition]
    [153] The composition of the present invention is used to form an antireflection film when forming a resist pattern on a semiconductor substrate. Specifically, it is used as follows, for example. That is, the conventional resist pattern forming method is
    [154] 1) a step of coating the antireflection film-forming composition of the present invention on a substrate and baking the obtained coating film to form an antireflection film,
    [155] 2) applying a resist composition solution on the antireflection film and baking the obtained coating film to form a resist film,
    [156] 3) selectively exposing the resist film with radiation through an exposure mask,
    [157] 4) developing the exposed resist film; and
    [158] 5) etching the anti-reflection film.
    [159] The film thickness of the antireflective film formed in a 1st process is 100-5,000 angstroms, for example, and a composition is apply | coated by methods, such as rotational coating, casting | flow_spread coating, roll coating, etc., for example. Subsequently, baking is performed to thermoset the antireflection film composition. At this time, baking temperature is about 90-350 degreeC, for example. As a board | substrate, a silicon wafer, the wafer coat | covered with aluminum, etc. are mentioned, for example.
    [160] In a 2nd process, the resist composition solution is formed by apply | coating and prebaking a resist composition solution so that the resist film obtained on the said anti-reflection film may become predetermined film thickness, and a resist film is formed. The prebaking temperature at this time is suitably adjusted according to the kind etc. of resist used. Usually, it is about 30-200 degreeC, Preferably it is 50-150 degreeC.
    [161] In order to form the resist film on the antireflection film, the resist composition is dissolved in a suitable solution so that the solid content concentration is 5 to 50% by weight, and then filtered with a filter having a pore diameter of about 0.2 μm to prepare a composition solution, which is subjected to rotational coating, flexible coating, It apply | coats on an anti-reflective film by methods, such as roll coating. In this case, a commercially available resist solution can be used as it is.
    [162] As a resist composition used above, the positive resist composition which consists of alkali-soluble resin and a quinonediazide type photosensitive agent, the negative resist composition which consists of alkali-soluble resin and a radiation sensitive crosslinking agent, and the positive type containing a radiation sensitive acid generator Or negative chemically amplified resist compositions.
    [163] The radiation that can be used for exposure in the third step is appropriately selected from visible light, ultraviolet light, far ultraviolet rays, X-rays, electron beams, gamma rays, molecular rays, ion beams, and the like depending on the type of resist used. Among these radiations, preferred are far infrared rays, in particular KrF excimer laser (248 nm) and ArF excimer laser (193 nm) are preferably used.
    [164] Next, in the fourth step, the resist after exposure is developed. Then, it wash | cleans and dries to obtain a desired resist pattern. During this process, baking may be performed before post-exposure development in order to improve resolution, pattern profile, developability, and the like.
    [165] Finally, in the fifth step, dry etching of the antireflection film is performed using a gas plasma such as oxygen plasma using the resist pattern as a mask to obtain a resist pattern for substrate processing.
    [166] As a developing solution used in the said process, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, Methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo- [5,4,0]- And alkaline aqueous solutions obtained by dissolving 7-undecene, 1,5-diazabicyclo- [4,3,0] -5-nonane, and the like. In addition, an appropriate amount of a water-soluble organic solvent, alcohols such as methanol and ethanol, and a surfactant can be added to the developer.
    [167] EMBODIMENT OF THE INVENTION Hereinafter, embodiment is given and embodiment of this invention is described more concretely. However, this invention is not restrict | limited at all by these Examples. Here, "part" means a "weight part" unless there is particular notice.
    [168] The Mw of the resin obtained in the following synthesis examples was a GPC column (2 G2000HXL, 1 G3000HXL, 1 G4000HXL) manufactured by Tosoh Corporation, and flow rate: 1.0 milliliter / min, elution solvent: tetrahydrofuran, column Temperature: It measured by gel permeation chromatography (GPC) which makes monodisperse polystyrene the standard by the analysis conditions of 40 degreeC.
    [169] The performance evaluation of the antireflection film forming composition was performed in the following manner.
    [170] <Optical Characteristic Measurement>
    [171] After the anti-reflective film forming composition was spin-coated on an 8 inch silicon wafer, it was baked on a hot plate at 345 ° C. for 120 seconds to form an anti-reflective film having a thickness of 0.1 μm. The refractive index (n value) and the absorbance (k value) at 248 nm were measured using the spectroscopic ellipsometer UV-1280E manufactured by KLA-TENCOR. In addition, n and k values at 193 nm were measured using a spectroscopic ellipsometer MOSS-ESVG DEEP UV manufactured by SOPRA.
    [172] <Formation of Positive Resist Pattern for KrF>
    [173] The antireflection film-forming composition was spin-coated on an 8-inch silicon wafer to obtain a film having a film thickness of 600 kPa, and then baked for 120 seconds on a hot plate at 345 ° C to form an antireflection film. Thereafter, a spin coating of the resist solution for KrF (trade name KRF M20G, manufactured by JSR Co., Ltd.) was obtained on the antireflection film to obtain a resist film having a thickness of 0.61 μm, and then baked on a hot plate at 140 ° C. for 1 minute to form a resist film. Formed. Subsequently, using an Nikon Corporation stepper NSR2005EX12B (wavelength 248 nm), the exposure time (hereinafter referred to as "optimal exposure time") is used to form a line-and-space pattern of 0.22 탆 width in a line width of 1: 1. Only exposure was performed. Subsequently, after baking for 90 seconds on a 140 degreeC hotplate, it developed at 23 degreeC for 30 second using 2.38 weight% tetramethylammonium hydroxide aqueous solution, wash | cleaned with water, and dried, and formed the positive resist pattern. .
    [174] <Formation of Positive Resist Pattern for ArF>
    [175] The antireflection film composition was spin coated onto an 8-inch silicon wafer to obtain a film having a film thickness of 600 kPa, and then baked for 120 seconds on a hot plate at 345 ° C to form an antireflection film. Thereafter, the resist solution for ArF obtained in Reference Example 1 described later on the antireflection film was spin coated to obtain a resist film having a thickness of 0.5 μm, and then baked on a hot plate at 130 ° C. for 90 seconds to form a resist film. Subsequently, exposure was performed through a mask pattern by a positive resist excimer laser exposure apparatus (lens numerical aperture 0.60, exposure wavelength 193 nm) for ArF manufactured by ISI. Subsequently, after baking for 90 seconds on a 130 degreeC hotplate, it developed for 1 minute at 25 degreeC using the aqueous solution of tetramethylammonium hydroxide of 2.38 weight% concentration, wash | cleaned with water, and dried, and a positive type resist pattern was obtained. Formed.
    [176] <Inter mixing prevention effect>
    [177] According to the conditions described above, the antireflection film and the resist film were formed, exposed and developed. The degree of hamming of the resist film at the contact point between the portion remaining after the development of the resist film and the antireflection film was examined using a scanning electron microscope.
    [178] <Standing wave prevention effect>
    [179] According to the conditions described above, the antireflection film and the resist film were formed, exposed and developed. Then, the presence or absence of the influence of the standing wave on a resist film was investigated using the scanning electron microscope.
    [180] Reference Example 1 (Preparation of a resist solution for ArF)
    [181] In a separate flask equipped with a reflux tube, 8 parts of 8-methyl-8-t-butoxycarbonylmethoxycarbonyltetracyclo [4.4.0.1 2.5 .1 7.10 ] dodec-3-ene under nitrogen stream, 8 parts 10 parts of doxydeccyclo [4.4.0.1 2.5 .1 7.10 ] dodec-3-ene, 18 parts maleic anhydride, 4 parts 2,5-dimethyl-2,5-hexanedioldiacrylate, t-dodecylmercaptone 1 Parts, 4 parts of azobisisobutyronitrile and 60 parts of 1,2-diethoxyethane were added thereto and polymerized at 70 ° C. for 6 hours. After the completion of the polymerization, the reaction solution was poured into a large amount of n-hexane / i-propyl alcohol (weight ratio = 1/1) mixed solution to coagulate the resin, and the coagulated resin was washed with the same mixed solvent, followed by vacuum drying. The content rate of the structural unit represented by each formula of 6a, 6b, 6c was 60 mol%, 18 mol%, and 18 mol%, respectively, and the copolymer whose Mw is 27,000 was obtained by yield 60weight%.
    [182]
    [183]
    [184]
    [185] 80 parts of the obtained copolymer, 1.5 parts of 4-methoxy-1-naphthyltetrahydrothiophenium nonafluoro-n-butanesulfonate and 0.04 parts of tri-n-octylamine were dissolved in 533 parts of propylene glycol monoethyl ether acetate. To prepare an ArF resist solution.
    [186] Synthesis Example 1 Synthesis of Polymer (A)
    [187] 100 parts of acenaphthylene, 78 parts of toluene, 52 parts of dioxane and 3 parts of azobisisobutyronitrile (AIBN) were added to a separate flask equipped with a thermometer under nitrogen and stirred at 70 ° C. for 5 hours. Subsequently, 5.2 parts of p-toluenesulfonic acid monohydrate and 40 parts of paraformaldehyde were added, and it heated up at 120 degreeC and stirred for further 6 hours. The obtained reaction solution was thrown into a large amount of isopropanol, and the precipitated resin was collected by filtration. It dried under reduced pressure at 40 degreeC, and obtained the polymer (A). It was confirmed that the obtained resin was a polymer having a structure represented by the following formula (5) from the result of 1 H-NMR as Mw of 22,000 (polystyrene equivalent).
    [188]
    [189] Synthesis Example 2 (Synthesis of Polymer (A ′))
    [190] 100 parts of acenaphthylene, 78 parts of toluene, 52 parts of dioxane, 5.2 parts of p-toluenesulfonic acid monohydrate and 40 parts of paraformaldehyde were added to a separate flask equipped with a thermometer, and the mixture was heated to 120 ° C and stirred for further 6 hours. Then, the temperature was lowered to 70 ° C., and 3 parts of azobisisobutyronitrile (AIBN) was added under nitrogen and stirred at this temperature for 5 hours. The obtained reaction solution was thrown into a large amount of isopropanol, and the precipitated resin was collected by filtration. It dried under reduced pressure at 40 degreeC, and obtained the polymer (A). It was confirmed that the obtained resin was a polymer having a structure represented by the above formula (5) from the result of 1 H-NMR as Mw of 22,000 (polystyrene equivalent).
    [191] <Example 1>
    [192] 10 parts of the polymer (A) prepared in Synthesis Example 1 and 0.5 parts of bis (4-t-butylphenyl) iodonium camphorsulfonate and 4,4 '-[1- [4- [1- (4-hydroxyphenyl) 0.5 part of -1-methylethyl] phenyl] ethylidene] bisphenol was dissolved in 89 parts of cyclohexanone, and the obtained solution was filtered through a membrane filter having a pore diameter of 0.1 µm to prepare an antireflection film-forming composition. Subsequently, performance evaluation was performed as mentioned above about the obtained composition. The evaluation results are shown in Table 1.
    [193] <Example 2>
    [194] Example except that 4,4 '-[1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol was used as a novolak resin having a Mw of 10,000 in terms of polystyrene. In the same manner as in 1, an antireflection film-forming composition was prepared. The obtained composition was evaluated for performance as described above. The evaluation results are shown in Table 1.
    [195] <Example 3>
    [196] 4,4 '-[1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol is a glycoluril-based curing agent (brand name nikalac N-2702, ( Note) The antireflection film-forming composition was prepared in the same manner as in Example 1, except that the product was made from Sanwa Chemical Co., Ltd.). About the obtained composition, performance evaluation was performed as mentioned above. The evaluation results are shown in Table 1.
    [197] <Example 4>
    [198] An underlayer film forming composition was prepared in the same manner as in Example 1 except that the polymer (A) obtained in Synthesis Example 1 was used as the polymer (A ') obtained in Synthesis Example 2. The obtained composition was evaluated for performance as described above. The evaluation results are shown in Table 1.
    [199] Example 5
    [200] The underlayer film forming composition was prepared like Example 2 except having used the polymer (A) obtained by the synthesis example 1 as the polymer (A ') obtained by the synthesis example 2. The obtained composition was evaluated for performance as described above. The evaluation results are shown in Table 1.
    [201] <Example 6>
    [202] An underlayer film-forming composition was prepared in the same manner as in Example 3 except that the polymer (A) obtained in Synthesis Example 1 was used as the polymer (A ') obtained in Synthesis Example 2. The obtained composition was evaluated for performance as described above. The evaluation results are shown in Table 1.
    [203] Comparative Example 1
    [204] Performance evaluation was carried out similarly to Examples 1 to 3 except that the antireflection film-forming composition was not used. The evaluation results are shown in Table 1.
    [205] Optical properties (248 nm)Optical properties (198 nm)The influence of standing wavesWhether or not intermixing n valuek valuen valuek valueKrFArFKrFArF Example 11.970.211.420.44radishradishradishradish Example 21.980.211.420.44radishradishradishradish Example 32.000.251.400.40radishradishradishradish Example 41.970.211.420.44radishradishradishradish Example 51.980.211.420.44radishradishradishradish Example 62.000.251.400.40radishradishradishradish Comparative Example 1----UUUU
    [206] The antireflection film formed by using the antireflection film forming composition of the present invention has a high antireflection effect and does not generate intermixing with the resist, so that the antireflection film cooperates with the positive and negative resists to provide a resist pattern having excellent resolution and precision. Can provide. Therefore, the antireflective film forming composition of the present invention is particularly conducive to the manufacture of integrated circuits of high density.
    权利要求:
    Claims (12)
    [1" claim-type="Currently amended] An antireflection film-forming composition comprising a polymer having a structural unit represented by the following formula (1) and a solvent.
    <Formula 1>

    In the formula,
    R 1 is a monovalent atom or group other than a hydrogen atom, n is an integer of 0 to 4, provided that when R is 2 to 4, a plurality of R 1 may be the same or different, and R 2 and R 3 are independent Is a monovalent atom or group, and X is a divalent group.
    [2" claim-type="Currently amended] The compound of claim 1, wherein R 1 is a halogen atom, an alkyl group, an alkenyl group, a nitro group, an amino group, a hydroxyl group, a phenyl group, an acyl group, a carboxyl group, a sulfonic acid group or a mercapto group, and when a plurality of R 1 are present, Compositions that may vary.
    [3" claim-type="Currently amended] The composition according to claim 1, wherein R 2 and R 3 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, a nitro group, an amino group, a hydroxyl group, a phenyl group, an acyl group, a carboxyl group, a sulfonic acid group, or a mercapto group. .
    [4" claim-type="Currently amended] The composition of claim 1, wherein the structural unit represented by Chemical Formula 1 includes a structural unit represented by Chemical Formula 2. 7.
    <Formula 2>

    In the formula, R 1 to R 3 and n are as described above, and R 4 represents a hydrogen atom or a monovalent organic group.
    [5" claim-type="Currently amended] The composition according to claim 4, wherein the structural unit represented by the formula (2) is 50 mol% or more in the total structural units represented by the formula (1).
    [6" claim-type="Currently amended] According to claim 4, wherein R 4 is a linear or branched alkyl group of 1 to 6 carbon atoms, a straight or branched alkenyl group of 2 to 6 carbon atoms, an alicyclic group of 4 to 10 carbon atoms , An aromatic hydrocarbon group having 6 to 12 carbon atoms, or a 4 to 10 membered heterocyclic group.
    [7" claim-type="Currently amended] The composition of claim 1, wherein the solvent is present in an amount such that the solid concentration of the composition is from 0.01 to 70% by weight.
    [8" claim-type="Currently amended] The composition of claim 7, wherein the solvent is present in an amount such that the solid concentration of the composition is from 0.05 to 60% by weight.
    [9" claim-type="Currently amended] The composition of claim 1, further comprising a crosslinking agent.
    [10" claim-type="Currently amended] The composition of claim 9, wherein the crosslinker is present in an amount of up to 5,000 parts by weight per 100 parts by weight of solids of the composition.
    [11" claim-type="Currently amended] The composition of claim 1, further comprising a binder resin.
    [12" claim-type="Currently amended] The composition of claim 11 wherein the binder resin is present in an amount of up to 20 parts by weight per 100 parts by weight of the polymer of component (A).
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    同族专利:
    公开号 | 公开日
    DE60105523D1|2004-10-21|
    US6852791B2|2005-02-08|
    TWI278496B|2007-04-11|
    US20020086934A1|2002-07-04|
    EP1205805A1|2002-05-15|
    KR100772303B1|2007-11-02|
    DE60105523T2|2005-09-29|
    EP1205805B1|2004-09-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2000-11-14|Priority to JPJP-P-2000-00347188
    2000-11-14|Priority to JP2000347188
    2001-11-13|Application filed by 마쯔모또 에이찌, 제이에스알 가부시끼가이샤
    2002-05-21|Publication of KR20020037442A
    2007-11-02|Application granted
    2007-11-02|Publication of KR100772303B1
    优先权:
    申请号 | 申请日 | 专利标题
    JPJP-P-2000-00347188|2000-11-14|
    JP2000347188|2000-11-14|
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